Ultra thin, low ESL and high frequency performance of high density silicon capacitors
| Autor: | Catherine Bunel, Franck Murray |
|---|---|
| Rok vydání: | 2016 |
| Předmět: |
Dielectric absorption
Materials science Silicon business.industry Electrical engineering chemistry.chemical_element Hardware_PERFORMANCEANDRELIABILITY Filter capacitor law.invention Capacitor Film capacitor chemistry Hardware_GENERAL law Automotive Engineering Hardware_INTEGRATEDCIRCUITS Miniaturization Optoelectronics business Ceramic capacitor Decoupling (electronics) |
| Zdroj: | International Symposium on Microelectronics. 2016:000060-000063 |
| ISSN: | 2380-4505 |
| Popis: | The very high capacitance platform (now up to 900 nF/mm2) of the 3D Silicon capacitor technology presents many advantages for signal integrity, performance improvement, and miniaturization. In this paper, we will illustrate these advantages for communication infrastructure and high speed processors. The intrinsic IPDiA Silicon capacitors construction and the simplified equivalent electrical models will be compared with the multilayer ceramic capacitor (MLCC) model. We will also demonstrate how the Silicon capacitors are better candidates for performance, miniaturization and integration thanks to their low profile. The thickness has been a limiting factor for ceramic capacitors and we believe that Silicon capacitors will help to address this profile challenge. On top of the competitive overview of performances specific to the Ultra Wide Broadband Capacitors - like signal integrity, frequency response, linearity, and dielectric absorption - the additional Silicon capacitor technology benefits will be detailed. Design recommendations will be given to those who want to optimize performance. Perspectives and roadmap for the future will be disclosed. |
| Databáze: | OpenAIRE |
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