Subthreshold Continuum Conductance Change in NbO Pt Memristor Interfaces
| Autor: | Dirar Homouz, Maguy Abi Jaoude, Heba Abunahla, Curtis J. O'Kelly, Baker Mohammad |
|---|---|
| Rok vydání: | 2016 |
| Předmět: |
Materials science
Silicon chemistry.chemical_element Nanotechnology 02 engineering and technology Memristor Conductivity 01 natural sciences law.invention law 0103 physical sciences Physical and Theoretical Chemistry 010302 applied physics Subthreshold conduction business.industry Electrical element 021001 nanoscience & nanotechnology Surfaces Coatings and Films Electronic Optical and Magnetic Materials General Energy Semiconductor chemistry Neuromorphic engineering Optoelectronics 0210 nano-technology business Voltage |
| Zdroj: | The Journal of Physical Chemistry C. 120:18971-18976 |
| ISSN: | 1932-7455 1932-7447 |
| DOI: | 10.1021/acs.jpcc.6b05010 |
| Popis: | Bioinspired semiconductor-based devices with adaptive and dynamic properties will have many advantages over conventional static digital silicon-based technologies. The ability to compute, process, and retain information in parallel, without referencing other circuit elements, offers enhanced speed, storage density, energy efficiency, and functionality benefits. A novel crossbar microwire-based device consisting of Nb/NbO/Pt structure that exhibits neural synapse-like adaptive conductivity (i.e., synaptic plasticity) is presented. The neuromorphic memristive junction, formed at the interface between the Pt metal wire and the thermally annealed core–shell Nb–NbO wire, demonstrates 1000 times conductivity change with an effective continuum of resistance levels. The device can also be fully activated to display standard resistance switching between two states. In the subthreshold regime, the voltage flux applied through the ∼400 nm thick NbO junction is shown to have a linear relationship to the charge produc... |
| Databáze: | OpenAIRE |
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