Tuning the inhomogeneous charge transport in ZnO interfaces for ultrahigh on/off ratio top-gated field-effect-transistor arrays
| Autor: | Won Tae Kang, Min Ji Lee, Thanh Luan Phan, Van Tu Vu, Quoc An Vu, Linfeng Sun, Thi Suong Le, Sidi Fan, Hyun Yong Song, Woo Jong Yu, Dinh Loc Duong, Tuan Khanh Chau, Young Hee Lee |
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| Rok vydání: | 2020 |
| Předmět: |
Materials science
business.industry Wide-bandgap semiconductor Oxide 02 engineering and technology Conductivity 010402 general chemistry 021001 nanoscience & nanotechnology Condensed Matter Physics 01 natural sciences Atomic and Molecular Physics and Optics 0104 chemical sciences chemistry.chemical_compound chemistry Electric field Monolayer Optoelectronics General Materials Science Field-effect transistor Wafer Electrical and Electronic Engineering Thin film 0210 nano-technology business |
| Zdroj: | Nano Research. 13:3033-3040 |
| ISSN: | 1998-0000 1998-0124 |
| Popis: | The interface between oxide/oxide layers shows an inhomogeneous charge transport behavior, which reveals a high conductivity owing to interface-doped. One typical example is the hetero-interface between ZnO film and other wide band gap oxides (e.g., Al2O3, TiO2, and HfO2). It is thus quite evident that the ZnO/other oxides hetero-interface contains high density electron carriers effectively screening the gate-induced electric field. Thus, an extremely weak gate modulation in ZnO film was showed, resulting in very low on/off ratio of 1.69 in top-gate field-effect-transistor (TG-FET) configuration. So, to extend the usage of ZnO TG-FET is not quite possible toward further practical application. Herein, we clarified the correlation of inhomogeneous region in oxide/oxide hetero-junction by systematically study. Our work suggests that a self-assembly of molecules (SAM) buffer layer is suitable for tuning the inhomogeneous charge transport in ZnO film, which not only reduces the interface trap density, but also effectively enhances the gate electric field modulation at the hetero-interface. We further report the robust fabrication of TG-FET arrays based on ZnO thin film, using an ultra-thin alkylphosphonic acid molecule monolayer as buffer layer. Our device demonstrates a pronounced ultrahigh on/off ratio of ≥ 108, which is 8-order of magnitude higher than that of a device without buffer layer. For the highly reliable arrays, our device exhibits a high yield of over 93% with an average on/off ratio of ~107 across the entire wafer scale, mobility (18.5 cm2/(V·s)), an extended bias-stressing (~ 2,000 s) and long-stability (~ 150 days) under ambient conditions. |
| Databáze: | OpenAIRE |
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