Design of a nanoscale silicon laser
| Autor: | Supriya L. Jaiswal, John T. Simpson, C. W. White, S.P. Withrow, P.M. Norris |
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| Rok vydání: | 2003 |
| Předmět: | |
| Zdroj: | Applied Physics A: Materials Science & Processing. 77:57-61 |
| ISSN: | 1432-0630 0947-8396 |
| DOI: | 10.1007/s00339-003-2093-9 |
| Popis: | The recent observation of optical gain from silicon nanocrystals embedded in SiO2 opens an opportunity to develop a nanoscale silicon-based laser. However, the challenge remains to design and develop a laser architecture using CMOS-compatible materials. In this paper we present two designs for a waveguide laser in which silicon nanocrystals embedded in SiO2 are used as the optical gain media. One design employs a SiO2 membrane containing encapsulated Si nanocrystals. Preliminary calculations given here show that a highly resonant laser cavity can be produced in a SiO2 membrane using sub-wavelength structures. This photonic crystal architecture, used to guide and contain the light, can be combined with a gain medium of optically active Si nanocrystals synthesized in the SiO2 membrane using ion implantation/thermal annealing to produce a Si-based laser. The laser cavity dimensions can be matched to the near-infrared wavelengths where optical gain has been observed from Si nanocrystals. The second design utilizes silicon nanocrystals embedded in a distributed-feedback laser cavity fabricated in SiO2. Lasing action over a broad wavelength range centered at ∼770 nm should be possible in both of these configurations. |
| Databáze: | OpenAIRE |
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