The via resistance analysis at ALD-to-PVD TaN transition layer
| Autor: | Jong-Mil Youn, Kichang Sung, Ju-Heon Kim, Jeong-Hoon Ahn, Wonkyu Han, Junki Jang, Yun-Ki Choi, Woojin Jang, Hoon Kim, Chang-Hyun Kim, Hyunju Yim, Wonmo Kang, Rak-Hwan Kim, Youngju Lim, Young Soo Yoon, Dongwoo Shin |
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| Rok vydání: | 2021 |
| Předmět: |
Materials science
integumentary system technology industry and agriculture chemistry.chemical_element Nitrogen Metal Atomic layer deposition chemistry visual_art Transition layer visual_art.visual_art_medium Diffusion (business) Composite material skin and connective tissue diseases human activities |
| Zdroj: | 2021 IEEE International Interconnect Technology Conference (IITC). |
| Popis: | We demonstrate that when a thin ALD (atomic layer deposition) TaN as a barrier metal is deposited to the Cu interconnect, the upper via resistance is significantly increased. We also exhibit that the abnormal upper via resistance is consistent with the N/Ta increase by nitrogen diffusion. To overcome this issue, we investigate a hybrid TaN (PVD TaN on the top of ALD TaN), which prevents the nitrogen diffusion to the bottom of the upper via, resulting in the improvement of the upper via resistance. |
| Databáze: | OpenAIRE |
| Externí odkaz: |
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