Transparent silicon carbide/tunnel SiO 2 passivation for c‐Si solar cell front side: Enabling J sc > 42 mA/cm 2 and i V oc of 742 mV
| Autor: | Aryak Singh, A. O. Zamchiy, Kaining Ding, Miro Zeman, Malte Köhler, Kaifu Qiu, Alexander Eberst, Do Yun Kim, Olindo Isabella, Uwe Rau, Paul Alejandro Procel Moya, Manuel Pomaska, Friedhelm Finger, Vladimir Smirnov, Shenghao Li |
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| Rok vydání: | 2020 |
| Předmět: |
Materials science
Passivation 02 engineering and technology Chemical vapor deposition 01 natural sciences law.invention Carbide chemistry.chemical_compound law Saturation current 0103 physical sciences Solar cell Silicon carbide Crystalline silicon Electrical and Electronic Engineering 010302 applied physics Renewable Energy Sustainability and the Environment business.industry 021001 nanoscience & nanotechnology Condensed Matter Physics Electronic Optical and Magnetic Materials Silicon nitride chemistry Optoelectronics 0210 nano-technology business |
| Zdroj: | Progress in Photovoltaics: Research and Applications. 28:321-327 |
| ISSN: | 1099-159X 1062-7995 |
| Popis: | N-type microcrystalline silicon carbide (μc-SiC:H(n)) is a wide bandgap material that is very promising for the use on the front side of crystalline silicon (c-Si) solar cells. It offers a high optical transparency and a suitable refractive index that reduces parasitic absorption and reflection losses, respectively. In this work, we investigate the potential of hot wire chemical vapor deposition (HWCVD)–grown μc-SiC:H(n) for c-Si solar cells with interdigitated back contacts (IBC). We demonstrate outstanding passivation quality of μc-SiC:H(n) on tunnel oxide (SiO2)–passivated c-Si with an implied open-circuit voltage of 742 mV and a saturation current density of 3.6 fA/cm2. This excellent passivation quality is achieved directly after the HWCVD deposition of μc-SiC:H(n) at 250°C heater temperature without any further treatments like recrystallization or hydrogenation. Additionally, we developed magnesium fluoride (MgF2)/silicon nitride (SiNx:H)/silicon carbide antireflection coatings that reduce optical losses on the front side to only 0.47 mA/cm2 with MgF2/SiNx:H/μc-SiC:H(n) and 0.62 mA/cm2 with MgF2/μc-SiC:H(n). Finally, calculations with Sentaurus TCAD simulation using MgF2/μc-SiC:H(n)/SiO2/c-Si as front side layer stack in an IBC solar cell reveal a short-circuit current density of 42.2 mA/cm2, an open-circuit voltage of 738 mV, a fill factor of 85.2% and a maximum power conversion efficiency of 26.6%. |
| Databáze: | OpenAIRE |
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