GaAs radiation imaging detectors with an active layer thickness up to 1mm

Autor:	A. V. Tyazhev, D.L. Budnitsky, O.B Koretskay, O. P. Tolbanov, A.I. Potapov, A. P. Vorobiev, L.S. Okaevich, V. A. Novikov
Rok vydání:	2003
Předmět:	Physics Nuclear and High Energy Physics business.industry Detector Electromagnetic radiation Particle detector Franz–Keldysh effect Semiconductor detector Active layer Depletion region Electric field Optoelectronics business Instrumentation
Zdroj:	Nuclear Instruments and Methods in Physics Research Section A: Accelerators, Spectrometers, Detectors and Associated Equipment. 509:34-39
ISSN:	0168-9002
Popis:	Unlike conventional GaAs detector structures that use a space charge region (SCR) of a barrier structure, we propose to form a detector structure of resistor type made of GaAs compensated with Cr. In this case, the electric field distribution, ξ(x), is not screened by the ion concentration in the SCR but it is defined only by the uniformity of the distribution of the resistance value in the structure. The experimental results on measurements of the electrophysical characteristics and the electric field distribution are presented. It is shown that in these structures the electric field distribution is uniform through the whole high-resistive layer with a thickness up to 1 mm. The possibility of achieving high values of charge collection efficiency of gamma-radiation is demonstrated.
Databáze:	OpenAIRE
Externí odkaz:	https://explore.openaire.eu/search/publication?articleId=doi_________::2fea2d35e17bda6499c3e07cc16dccfd https://doi.org/10.1016/s0168-9002(03)01545-6 Zobrazit plný text záznamu Full Text from ScienceDirect