40K cryogenic rad-hard CMOS readout multiplexer fabrication process

Autor:	Terry M. Pierce, Randy Wilder, Damian Carver, Frank B. Jaworski, John T. Gasner, M. Coole, Allen W. Hairston, N. W. van Vonno
Rok vydání:	1994
Předmět:	Signal processing Fabrication Materials science Silicon business.industry chemistry.chemical_element Particle accelerator Cryogenics Multiplexer law.invention chemistry CMOS law Optoelectronics business Voltage
Zdroj:	SPIE Proceedings.
ISSN:	0277-786X
Popis:	Cryogenic signal processing and A/D conversion for the IR imaging and high energy physics experiment applications place severe demands on the silicon process involved, particularly in ionizing radiation environments. This paper describes a process specifically optimized for operation in the 40 K - 77 K temperature range in a total dose environment. Trade-offs of hardness, supply voltage and hot electron vulnerability are discussed and preliminary device- level results are shown.
Databáze:	OpenAIRE
Externí odkaz:	https://explore.openaire.eu/search/publication?articleId=doi_________::2fdf36dd592abe986696b621146d7219 https://doi.org/10.1117/12.178471 Zobrazit plný text záznamu