Autor: |
Terry M. Pierce, Randy Wilder, Damian Carver, Frank B. Jaworski, John T. Gasner, M. Coole, Allen W. Hairston, N. W. van Vonno |
Rok vydání: |
1994 |
Předmět: |
|
Zdroj: |
SPIE Proceedings. |
ISSN: |
0277-786X |
Popis: |
Cryogenic signal processing and A/D conversion for the IR imaging and high energy physics experiment applications place severe demands on the silicon process involved, particularly in ionizing radiation environments. This paper describes a process specifically optimized for operation in the 40 K - 77 K temperature range in a total dose environment. Trade-offs of hardness, supply voltage and hot electron vulnerability are discussed and preliminary device- level results are shown. |
Databáze: |
OpenAIRE |
Externí odkaz: |
|