Enhanced performance of OLED based on molecular orientation of emission layer by optimized substrate temperature
Autor: | Xiaochen Dong, Shuai Wang, Wenjun Wang, Yunlong Liu, Hui Du, Qianqian Du, Dongyue Cui, Ling Zhao, Shuhong Li |
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Rok vydání: | 2021 |
Předmět: |
010302 applied physics
Electron mobility Materials science Photoluminescence business.industry Transition dipole moment Quantum yield Substrate (electronics) Condensed Matter Physics 01 natural sciences Atomic and Molecular Physics and Optics Electronic Optical and Magnetic Materials 0103 physical sciences OLED Optoelectronics Quantum efficiency Electrical and Electronic Engineering business Luminous efficacy |
Zdroj: | Journal of Materials Science: Materials in Electronics. 32:12075-12083 |
ISSN: | 1573-482X 0957-4522 |
DOI: | 10.1007/s10854-021-05836-3 |
Popis: | Horizontally oriented transition dipole moment (TDM) of the molecule in emission layers (EMLs) can boost out-coupling efficiency, resulting in higher performance organic light-emitting diodes (OLEDs). As known, the substrate temperature ( $$T_{s}$$ ) has a significant effect on the TDM of molecules. In this paper, the doped EMLs deposited with different $$T_{s}$$ ranging from 30 to 100 °C were prepared and the corresponding photoluminescence quantum yield (PLQY) and TDM were measured. In addition, these EMLs with different $$T_{s}$$ were employed to the OLED devices. The best luminous efficiency (51.4 cd/A), power efficiency (68.9 lm/W) and external quantum efficiency (EQE) (19.5%) were obtained in the OLED device where EMLs were deposited at 60 °C. However, the anisotropy factor $$\Theta$$ at this temperature is not the best, which is inconsistent with the common rules that high $$\Theta$$ causes high EQE. This phenomenon was ascribed to the in-situ annealing process for the hole transport layer (HTL) during the deposition of EMLs with different $$T_{s}$$ . The synergy of PLQY and TDM orientation of EMLs, the hole mobility of hole only devices (HODs) contribute to the high performance of OLED device at 60 °C. |
Databáze: | OpenAIRE |
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