| Autor: |
M. Guerra, J.L. Freeouf, S.F. Chu, D. K. Sadana, H.J. Hovel, P.A. McFarland |
| Rok vydání: |
2002 |
| Předmět: |
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| Zdroj: |
Proceedings of 1993 IEEE International SOI Conference. |
| DOI: |
10.1109/soi.1993.344610 |
| Popis: |
It is well established that CMOS SOI technology provides improved device and circuit performance compared to bulk silicon. Extremely fast ring oscillators with delay time as low as 20 ps at 1.5 V and operating at room temperature have been demonstrated on SIMOX material. The standard SIMOX contains a thin SOI layer of 1800 /spl Aring/ and a buried oxide (BOX) of 3800 /spl Aring/. It appears from the simulation data that an optimum fully depleted SOI device may require a BOX of /spl lsim/2000 /spl Aring/ for two reasons: (i) to allow field lines to penetrate through the BOX and (ii) to minimize superficial Si heating. The SIMOX material development for the present investigation is therefore aimed at optimizing implant/annealing conditions which provide a thin BOX (/spl lsim/2000 /spl Aring/) and lower defects. > |
| Databáze: |
OpenAIRE |
| Externí odkaz: |
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