The Growth of GaN Films on Si Substrates by HVPE

Autor:	Rong Zhang, S.L. Gu, Youdou Zheng, Huiqiang Yu, Zi Li Xie, Y.D. Ye, Yi Shi, Ben Shen, Lin Chen, Xiang Qian Xiu
Rok vydání:	2005
Předmět:	Materials science Silicon Hydride Mechanical Engineering Vapor phase chemistry.chemical_element Condensed Matter Physics Epitaxy Deposition temperature Chemical engineering chemistry Mechanics of Materials General Materials Science Layer (electronics)
Zdroj:	Materials Science Forum. :3783-3786
ISSN:	1662-9752
DOI:	10.4028/www.scientific.net/msf.475-479.3783
Popis:	GaN films are grown on Si(111) with low-temperature GaN (LT-GaN) layers as buffer layers by hydride vapor phase epitaxy (HVPE). The LT-GaN layers are deposited at different temperatures ranging from 400 to 900 °C. The surface property, the structure and optical properties of the GaN films with different LT-GaN layers are studied. When deposition temperature of LT-GaN layer is 600 °C, the GaN film shows the best properties.
Databáze:	OpenAIRE
Externí odkaz:	https://explore.openaire.eu/search/publication?articleId=doi_________::2fcf1dbc4da6bf368b5ef046a1495187 https://doi.org/10.4028/www.scientific.net/msf.475-479.3783 Zobrazit plný text záznamu