The behavior of Ni/Au contacts under rapid thermal annealing in GaN device structures
| Autor: | M.A. di Forte-Poisson, M. Calligaro, J. Di Persio, F. Huet, F. Wyczisk, J. Olivier |
|---|---|
| Rok vydání: | 1999 |
| Předmět: |
Materials science
Solid-state physics Annealing (metallurgy) Analytical chemistry Condensed Matter Physics Electronic Optical and Magnetic Materials Auger Metal Crystallography visual_art Materials Chemistry visual_art.visual_art_medium Electrical and Electronic Engineering Rapid thermal annealing Homojunction Voltage contrast |
| Zdroj: | Journal of Electronic Materials. 28:1440-1443 |
| ISSN: | 1543-186X 0361-5235 |
| DOI: | 10.1007/s11664-999-0137-4 |
| Popis: | The effect of rapid thermal annealing (RTA) on Ni/Au contacts on P-type GaN was investigated in terms of surface morphology and diffusion depth of metallic species. Ni/Au contacts were evaporated on the P-type 0.5 µm thick top layer of a GaN P/N homojunction. Optical micrographs revealed that the contact morphology degrades when annealed above 800°C for 1 min. At the same time, both Ni and Au atoms strongly diffuse in the P-type layer and even can reach the junction for a 1 min long annealing at 900°C, therefore making the junction structure unoperable. This behavior was evidenced using the Auger voltage contrast (AVC) technique. |
| Databáze: | OpenAIRE |
| Externí odkaz: |
|
Full text from SpringerLink