Sputtering Process Model of Deposition Rate
| Autor: | R. G. Simmons, J. H. Keller |
|---|---|
| Rok vydání: | 1979 |
| Předmět: |
Yield (engineering)
Materials science General Computer Science Backscatter Physics::Instrumentation and Detectors business.industry Substrate (electronics) Sputter deposition Condensed Matter::Materials Science Physics::Plasma Physics Sputtering Forensic engineering Optoelectronics Deposition (phase transition) business Diode Voltage |
| Zdroj: | IBM Journal of Research and Development. 23:24-32 |
| ISSN: | 0018-8646 |
| DOI: | 10.1147/rd.231.0024 |
| Popis: | A model of the sputtering process has been developed that predicts the deposition rate of a sputtering system with parallel-plate geometry. By using data for sputtering yield vs voltage obtained from an ion-beam sputtering system, the model applies a new theory for computing the backscatter of the sputtered material, and, from the results, predicts deposition rates. The model also considers the effects of charge exchange in the sheaths, and of re-emission of sputtered material at the substrate. The model is valid for magnetic, tuned substrate, driven substrate, and controlled area ratio diode systems. Comparison with observed deposition rates shows good agreement for clean systems. An experimental APL program that uses the model has been written. |
| Databáze: | OpenAIRE |
| Externí odkaz: |
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