Project on an electrically reprogrammable fast read-out memory using bipolar tetrode transistors

Autor:	J.L. Aucouturier, J.P. Dom, Ph. Roux, M. Depey
Rok vydání:	1976
Předmět:	Engineering business.industry Bipolar junction transistor Transistor Electrical engineering Tetrode law.invention Power (physics) Current injection technique law Hardware_INTEGRATEDCIRCUITS Electronic engineering EPROM Tetrode transistor business Access time Hardware_LOGICDESIGN
Zdroj:	ESSCIRC 76: 2nd European Solid State Circuits Conference.
DOI:	10.1109/esscirc.1976.5469100
Popis:	This paper presents a project on an electrically reprogrammable memory system in which the control of the avalanche degradation of the H FE of bipolar tetrode transistor is executed by the gate voltage. The design of a type REPROM with 1024 bits capacity having an access time better than 100 ns for a total power of 500 mW is attempted.
Databáze:	OpenAIRE
Externí odkaz:	https://explore.openaire.eu/search/publication?articleId=doi_________::2fbfea846de63e5d2afd013c006dd1c7 https://doi.org/10.1109/esscirc.1976.5469100 Zobrazit plný text záznamu