Applications of synchrotron radiation X-ray techniques on the analysis of the behavior of transition metals in solar cells and single-crystalline silicon with extended defects
| Autor: | O. F. Vyvenko, Tonio Buonassisi, M. Heuer, Eicke R. Weber, R. Schindler, Andrei A. Istratov, T.F. Ciszek, Barry Lai, Zhonghou Cai |
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| Rok vydání: | 2003 |
| Předmět: |
Materials science
Silicon business.industry chemistry.chemical_element Synchrotron radiation X-ray fluorescence Condensed Matter Physics Synchrotron Electronic Optical and Magnetic Materials law.invention Chemical state Optics Transition metal chemistry law Impurity Optoelectronics Crystalline silicon Electrical and Electronic Engineering business |
| Zdroj: | Physica B: Condensed Matter. :1137-1141 |
| ISSN: | 0921-4526 |
| DOI: | 10.1016/j.physb.2003.09.099 |
| Popis: | A high flux, non-destructive X-ray synchrotron-based technique, X-ray fluorescence microscopy (μ-XRF), is able to detect metal precipitates as small as a few tens of nanometers in diameter within a silicon matrix, with micron-scale spatial resolution. When this technique is combined with the X-ray beam-induced current (XBIC) technique, one can acquire, in situ, complementary information about the elemental nature of transition metal precipitates and their recombination activity. Additionally, X-ray absorption microspectroscopy (μ-XAS) analyses yield information about the local environment of the impurity atoms and their chemical state. Model defect structures and photovoltaic-grade multicrystalline silicon (mc-Si) were studied using these techniques, and the effect of transition metal clusters on the electrical properties of good and bad regions of mc-Si are discussed in detail. |
| Databáze: | OpenAIRE |
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