Fast Measurement of BTI on 28nm Fully Depleted Silicon-On-Insulator MOSFETs at Cryogenic Temperature down to 4K

Autor:	Lauriane Contamin, Mikael Casse, Xavier Garros, Fred Gaillard, Maud Vinet, Philippe Galy, Andre Juge, Emmanuel Vincent, Silvano de Franceschi, Tristan Meunier
Rok vydání:	2022
Zdroj:	2022 IEEE International Reliability Physics Symposium (IRPS).
Databáze:	OpenAIRE
Externí odkaz:	https://explore.openaire.eu/search/publication?articleId=doi_________::2fbab8a469c017b3c6ddeaf01f46d504 https://doi.org/10.1109/irps48227.2022.9764571 Zobrazit plný text záznamu