A study of semiconductor surfaces and devices by coupled IR photon tunneling and atomic-force microscopy
| Autor: | Michel Castagne, Jean-Pierre Fillard, P. Gall-Borrut, J. L. Weyher, Jacques Bonnafe |
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| Rok vydání: | 1998 |
| Předmět: |
Total internal reflection
Range (particle radiation) Photon Atomic force microscopy Chemistry business.industry Atomic and Molecular Physics and Optics Electronic Optical and Magnetic Materials law.invention Optics Semiconductor law Wafer Scanning tunneling microscope business Instrumentation Beam (structure) |
| Zdroj: | Ultramicroscopy. 71:231-234 |
| ISSN: | 0304-3991 |
| Popis: | Processed InP and GaAs surfaces are studied by synchronous atomic-force (AFM) and photon scanning tunneling microscopy (PSTM). A beam injection system at 1.06 μm in the transparency range of semiconductors is described which makes it possible to perform total internal reflection (TIR) without any specific preparation or shaping on standard wafers. |
| Databáze: | OpenAIRE |
| Externí odkaz: |
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