Synthesis and characterization of epitaxial YBa2Cu3O7−δ/KNbO3thin‐film heterostructures

Autor:	S. H. Rou, R. R. Woolcott, Daniel J. Lichtenwalner, C. N. Soble, T. M. Graettinger, Orlando Auciello, Angus I. Kingon
Rok vydání:	1992
Předmět:	Materials science Physics and Astronomy (miscellaneous) business.industry Mineralogy Substrate (electronics) Chemical vapor deposition Epitaxy Rutherford backscattering spectrometry Sputtering Transmission electron microscopy Optoelectronics Thin film business Layer (electronics)
Zdroj:	Applied Physics Letters. 61:1844-1846
ISSN:	1077-3118 0003-6951
DOI:	10.1063/1.108494
Popis:	YBa2Cu3O7−δ/KNbO3 thin‐film bilayers have been deposited on (100) MgO using an in situ ion‐beam sputter‐deposition technique. X‐ray diffraction and transmission electron microscopy indicate that both films grow epitaxially. The KNbO3 grows with the [00l] direction perpendicular to the MgO substrate surface, and the YBa2Cu3O7−δ (YBCO) grows c‐axis oriented (00l) on the (00l) KNbO3 film. The YBCO films have transition temperatures as high as 85 K. Rutherford backscattering spectrometry indicates that there is no noticeable potassium diffusion into the YBCO film or MgO substrate. Transmission electron microscopy has been used to study the microstructural details of the interface. Despite the epitaxy of YBCO on KNbO3, a thin reaction layer exists at the interface. The reacted layer may possibly be eliminated by optimizing deposition parameters.
Databáze:	OpenAIRE
Externí odkaz:	https://explore.openaire.eu/search/publication?articleId=doi_________::2fa274cdb0c9c3d04184a998d48cb341 https://doi.org/10.1063/1.108494