An Adiabatic Content-Addressable Memory Based on Dual Threshold Leakage Reduction Technique
Autor: | Xiaolei Sheng, Jintao Jiang, Jianping Hu |
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Rok vydání: | 2011 |
Předmět: |
Hardware_MEMORYSTRUCTURES
Materials science Transistor Hardware_PERFORMANCEANDRELIABILITY Content-addressable memory law.invention law Hardware_INTEGRATEDCIRCUITS Electronic engineering Dual threshold Adiabatic logic Adiabatic process Hardware_LOGICDESIGN Electronic circuit Voltage Leakage (electronics) |
Zdroj: | Communications in Computer and Information Science ISBN: 9783642198526 ISIA |
Popis: | This paper presents a CAM (Content-Addressable Memory) using dual threshold leakage reduction technique. A 16(16 CAM is demonstrated using the proposed dual threshold technique based on CPAL (complementary pass-transistor adiabatic logic) circuits. All circuits are verified using HSPICE in different temperature, high-threshold voltage, and active ratios in 45nm technology. BSIM4 model is adopted to reflect the leakage currents. Simulation results show that leakage losses of the CPAL CAM using dual threshold leakage reduction technique are obviously reduced both in work mode and idle mode compared with basic CPAL one using single threshold transistors. |
Databáze: | OpenAIRE |
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