Effects of source material on epitaxial growth of fluorescent SiC
| Autor: | Peter J. Wellmann, Valdas Jokubavicius, Michl Kaiser, S. Sano, S. Kamiyama, Jianwu Sun, Rositza Yakimova, Mikael Syväjärvi, Richard Liljedahl, Philip Hens |
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| Rok vydání: | 2012 |
| Předmět: |
Photoluminescence
Materials science Metals and Alloys Analytical chemistry Nanotechnology Surfaces and Interfaces Chemical vapor deposition Epitaxy Hot pressing Fluorescence Surfaces Coatings and Films Electronic Optical and Magnetic Materials chemistry.chemical_compound chemistry Materials Chemistry Silicon carbide Source material Sublimation (phase transition) |
| Zdroj: | Thin Solid Films. 522:7-10 |
| ISSN: | 0040-6090 |
| DOI: | 10.1016/j.tsf.2011.10.176 |
| Popis: | The growth of fluorescent SiC using Fast Sublimation Growth Process was demonstrated using different types of SiC source materials. These were prepared by (i) high-temperature hot pressing, (ii) chemical vapor deposition and (iii) physical vapor transport. The optimized growth rates of 50 μm/h, 170 μm/h and 200 μm/h were achieved using the three types of sources, respectively. The best results in respect to growth rates are obtained using higher density sources. Fluorescent SiC layers with mirror-like morphology, very good crystal quality and yellowish or warm white light photoluminescence at room temperature were grown using all three types of the source materials. |
| Databáze: | OpenAIRE |
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