Direct transformation of a resist pattern into a graphene field effect transistor through interfacial graphitization of liquid gallium
| Autor: | Ryuichi Ueki, Jun-ichi Fujita, Takeshi Saito, Mio Sasaki, Yosuke Miyazawa |
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| Rok vydání: | 2010 |
| Předmět: |
Materials science
business.industry Silicon dioxide Graphene Process Chemistry and Technology chemistry.chemical_element Field effect Conductance Nanotechnology Surfaces Coatings and Films Electronic Optical and Magnetic Materials law.invention chemistry.chemical_compound chemistry Resist law Modulation Materials Chemistry Optoelectronics Field-effect transistor Electrical and Electronic Engineering Gallium business Instrumentation |
| Zdroj: | Journal of Vacuum Science & Technology B, Nanotechnology and Microelectronics: Materials, Processing, Measurement, and Phenomena. 28:C6D1-C6D4 |
| ISSN: | 2166-2754 2166-2746 |
| DOI: | 10.1116/1.3511511 |
| Popis: | The authors found that an extremely thin resist pattern on a silicon dioxide can be directly transformed into a graphene channel through interfacial graphitization of liquid gallium. These patterned graphene field effect transistors show p-type field effect conductance characteristics and a maximum conductance modulation of 100% against an applied gate voltage range from −50 to +50 V at room temperature, which is almost identical to the on/off ratio of 2. These conductance modulation ratios improved with decreasing the initial resist thickness below 2 nm; however, the absolute value of the channel conductance also deteriorated with decreasing the resist thickness, suggesting that electron scattering at the domain boundary dominates the channel conductance. |
| Databáze: | OpenAIRE |
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