An antifuse EPROM circuitry scheme for field-programmable repair in DRAM

Autor:	Woodward Yang, Jin-Yong Chung, Sea-Chung Kim, Eui-Kyu Ryou, Seung-Han Ahn, Jae-Kyung Wee, Joe-Sun Choi
Rok vydání:	2000
Předmět:	Engineering business.industry Impedance matching High voltage Hardware_PERFORMANCEANDRELIABILITY Capacitance law.invention Capacitor law Hardware_INTEGRATEDCIRCUITS Electronic engineering Antifuse Output impedance Electrical and Electronic Engineering EPROM business Dram
Zdroj:	IEEE Journal of Solid-State Circuits. 35:1408-1414
ISSN:	1558-173X 0018-9200
DOI:	10.1109/4.871316
Popis:	An antifuse EPROM and 3-V programming circuit has been demonstrated in an existing 0.22-/spl mu/m DRAM process technology and is fully compatible with 64-Mb SDRAM specifications. The antifuse circuitry uses an internal high-voltage generator for programming and a dynamic sense and static latch scheme that appropriately enables redundant DRAM address decoders at power-up. For efficient high voltage generation, a high-voltage-tolerant capacitor structure was formed by using the high fringing capacitance available between intralevel and interlevel polysilicon and metal lines. Furthermore, the programmable EPROM element was realized without any process modifications by utilizing destructive dielectric breakdown of the thin, highly reliable oxide-nitride-oxide (ONO) dielectric in the basic DRAM cell capacitor structure. This antifuse EPROM circuit enables implementation of field-programmable DRAM features such as memory repair, output impedance matching, and data encryption.
Databáze:	OpenAIRE
Externí odkaz:	https://explore.openaire.eu/search/publication?articleId=doi_________::2f959a40b6c1054a29af8a60852b7845 https://doi.org/10.1109/4.871316 Zobrazit plný text záznamu