SiO2/c-Si Bilayer Electron-Beam Resist Process for Nano-Fabrication

Autor:	Hiroshi Hiroshima, Sucheta Gorwadkar, Toshimi Wada, Kenichi Ishii, Masanori Komuro, Satoshi Haraichi
Rok vydání:	1996
Předmět:	Fabrication Materials science business.industry Bilayer General Engineering General Physics and Astronomy Nanotechnology Isotropic etching Resist Etching (microfabrication) Optoelectronics business Layer (electronics) Buffered oxide etch Electron-beam lithography
Zdroj:	Japanese Journal of Applied Physics. 35:6673
ISSN:	1347-4065 0021-4922
Popis:	We have developed an SiO2/c-Si bilayer electron beam resist process in order to overcome the problems encountered in our previously developed SiO2/poly-Si resist system. The process parameters which include the electron beam exposure conditions, thicknesses of resist layers, etching of SiO2 and c-Si by using buffered HF solution and NMD-3 solution, respectively, are optimized. The developed SiO2/c-Si EB resist system is used to produce a suspended mask structure with an opening of 12 nm width for the double angle deposition of Ti for our proposed ultrasmall metal-insulator-metal tunnel junction fabrication process. We have also demonstrated the successful lift-off of inorganic resist by removing underlying c-Si layer of 40 ×40 µ m2 area using NMD-3 solution at 70° C, leaving an array of isolated Ti–TiO x –Ti dots, each having few hundred nm2 area, on the substrate.
Databáze:	OpenAIRE
Externí odkaz:	https://explore.openaire.eu/search/publication?articleId=doi_________::2f9440d170332e59e3418295ef8edb45 https://doi.org/10.1143/jjap.35.6673 Zobrazit plný text záznamu