Insitucleaning of GaAs surfaces using hydrogen dissociated with a remote noble‐gas discharge

Autor:	R. A. Rudder, G. G. Fountain, S. V. Hattangady, R. J. Markunas, M. J. Mantini, J. B. Posthill
Rok vydání:	1990
Předmět:	Auger electron spectroscopy Reflection high-energy electron diffraction Argon X-ray photoelectron spectroscopy Electron diffraction Hydrogen Chemistry Analytical chemistry General Physics and Astronomy Noble gas chemistry.chemical_element Chemical vapor deposition
Zdroj:	Journal of Applied Physics. 68:1233-1236
ISSN:	1089-7550 0021-8979
Popis:	In situ cleaning of GaAs surfaces has been achieved at 350 °C with a novel technique employing hydrogen that is excited and dissociated using a remote Ar discharge. Reconstructed surfaces characteristic of clean, As‐stabilized GaAs surfaces have been observed with reflection high‐energy electron diffraction following the cleaning treatment. Auger electron spectroscopy analyses confirm that such a treatment removes both carbon and oxygen contamination from the surface. X‐ray photoelectron spectroscopy shows the removal of oxygen bonded to both Ga and As on the surface. Emission spectroscopy shows evidence of excited molecular and atomic hydrogen with the downstream‐excitation process.
Databáze:	OpenAIRE
Externí odkaz:	https://explore.openaire.eu/search/publication?articleId=doi_________::2f91e4c6e739519adb04eafe9ad0035a https://doi.org/10.1063/1.346723 Zobrazit plný text záznamu