| Autor: |
Eswar Ramanathan, John Schaller, Mary Claire Silvestre, Anbu Selvam Km Mahalingam, Christopher Ordonio |
| Rok vydání: |
2015 |
| Předmět: |
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| Zdroj: |
2015 26th Annual SEMI Advanced Semiconductor Manufacturing Conference (ASMC). |
| Popis: |
In advanced nodes of 28nm and below, inline detection of a process issue inline is very challenging. Inline detection of process marginalities through Characterization Vehicle® (CV®), scribe line structures and optical scans are becoming more challenging. With the technology shrink and complex designs, the Characterization Vehicle® (CV®) and scribe line structures cannot completely represent the product designs. The optical scans were also less effective compared to past nodes due to the signal-noise ratio. Also the optical scans are effective to detect an issue that happens on the surface of the silicon rather than something buried. This paper discusses a methodology that was able to detect successfully the issue inline saving a lot of time in a manufacturing environment. |
| Databáze: |
OpenAIRE |
| Externí odkaz: |
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