Study of Single- and Dual-Channel Designs for High-Performance Strained-Si–SiGe n-MOSFETs
| Autor: | Anthony O'Neill, A. G. Cullis, Sarah H. Olsen, D. J. Norris, L.S. Driscoll, Sanatan Chattopadhyay, Douglas J. Paul, K.S.K. Kwa |
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| Rok vydání: | 2004 |
| Předmět: |
Fabrication
Materials science business.industry Hardware_PERFORMANCEANDRELIABILITY Surface finish Electronic Optical and Magnetic Materials Gate oxide MOSFET Thermal Hardware_INTEGRATEDCIRCUITS Electronic engineering Optoelectronics Electrical and Electronic Engineering Diffusion (business) business Layer (electronics) Communication channel |
| Zdroj: | IEEE Transactions on Electron Devices. 51:1245-1253 |
| ISSN: | 0018-9383 |
| DOI: | 10.1109/ted.2004.830652 |
| Popis: | Results comparing strained-Si-SiGe n-channel MOSFET performance of single-and dual-surface channel devices fabricated using 15% Ge content SiGe virtual substrates are presented. Device fabrication used high thermal budget processes and virtual substrates were not polished. Mobility enhancement factors exceeding 1.6 are demonstrated for both single-and dual-channel device architectures compared with bulk-Si control devices. Single-channel devices exhibit improved gate oxide quality, and larger mobility enhancements, at higher vertical effective fields compared with the dual-channel strain-compensated devices. The compromised performance enhancements of the dual-channel devices are attributed to greater interface roughness and increased Ge diffusion resulting from the Si/sub 0.7/Ge/sub 0.3/ buried channel layer. |
| Databáze: | OpenAIRE |
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