Realization of sub-10 picosecond switching times in selectively doped (Al,Ga)As/GaAs heterostructure transistors

Autor:	R.H. Hendel, N.J. Shah, Charles W. Tu, R. Dingle, B.J. Roman, S.S. Pei
Rok vydání:	1984
Předmět:	Materials science business.industry Transistor Doping Electrical engineering Heterojunction Gallium arsenide law.invention Length measurement chemistry.chemical_compound chemistry law Picosecond Optoelectronics Wafer business Direct-coupled amplifier
Zdroj:	1984 International Electron Devices Meeting.
Popis:	We report gate delay times of less than 10 ps for ring oscillators based on direct coupled FET logic implemented with selectively doped (Al,Ga) As/GaAs heterostructure transistors (SDHTs). The minimum delay time observed was 9.4 ps at 77K with a speed-power product of 42.4 fJ and 1.1 V bias. The gate length the enhancement mode driver FETs was measured to be 0.7 µm. Dual-clocked M/S (master-slave) dividers on the same wafer using dual gate SDHTs operated up to a maximum dividing frequency of 6.3 (13.0) GHz at 300 (77)K.
Databáze:	OpenAIRE
Externí odkaz:	https://explore.openaire.eu/search/publication?articleId=doi_________::2f760c273bc91b042fc98e02edf97146 https://doi.org/10.1109/iedm.1984.190864 Zobrazit plný text záznamu