Thin-film reactions during diffusion soldering of Cu/Ti/Si and Au/Cu/Al2O3 with Sn interlayers
| Autor: | Sui-Yuan Chang, Muh-Wang Liang, Tung-Han Chuang, Ting En Hsieh |
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| Rok vydání: | 2003 |
| Předmět: |
Arrhenius equation
Materials science Metallurgy Analytical chemistry Intermetallic chemistry.chemical_element Condensed Matter Physics Copper Electronic Optical and Magnetic Materials symbols.namesake chemistry Transition metal Ultimate tensile strength Materials Chemistry symbols Electrical and Electronic Engineering Thin film Tin Titanium |
| Zdroj: | Journal of Electronic Materials. 32:952-956 |
| ISSN: | 1543-186X 0361-5235 |
| DOI: | 10.1007/s11664-003-0229-5 |
| Popis: | The multilayer thin-film systems of Cu/Ti/Si and Au/Cu/Al2O3 were diffusion-soldered at temperatures between 250°C and 400°C by inserting a Sn thin-film interlayer. Experimental results showed that a double layer of intermetallic compounds (IMCs) η-(Cu0.99Au0.01)6Sn5/δ-(Au0.87Cu0.13)Sn was formed at the interface. Kinetics analyses revealed that the growth of intermetallics was diffusion-controlled. The activation energies as calculated from Arrhenius plots of the growth rate constants for (Cu0.99Au0.01)6Sn5 and (Au0.87Cu0.13)Sn are 16.9 kJ/mol and 53.7 kJ/mol, respectively. Finally, a satisfactory tensile strength of 132 kg/cm2 could be attained under the bonding condition of 300°C for 20 min. |
| Databáze: | OpenAIRE |
| Externí odkaz: |
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