| Autor: |
Hui Shao, G. Yan, Lian Zhou, Gaofeng Jiao, Xiaomei Xiong, Liu Guoqing, Di Shan, Qingyang Wang |
| Rok vydání: |
2012 |
| Předmět: |
|
| Zdroj: |
Cryogenics. 52:482-485 |
| ISSN: |
0011-2275 |
| DOI: |
10.1016/j.cryogenics.2012.05.013 |
| Popis: |
Ti 3 SiC 2 is used as the dopant, which not only provides C source for C substitution for B in the MgB 2 lattice, but also produces more non-superconducting precipitates locating in MgB 2 grain boundaries acting as the pinning centers. Carbon substitution of boron can be confirmed by the (1 0 0) peak of MgB 2 shift behavior with increasing Ti 3 SiC 2 doping level. The critical current density ( J c ) values are determined by M-H hysteresis loops. In low magnetic fields, the J c values for the undoped sample are higher than that for the doped samples. However, with increasing magnetic fields, the J c values for the doped samples are found to be enhanced for MgB 1.9 (Ti 3 SiC 2 ) 0.05 and MgB 1.85 (Ti 3 SiC 2 ) 0.075 . The flux pinning behavior has been investigated and it reveals that the flux pinning force can be improved by Ti 3 SiC 2 doping, when the non-superconducting phases uniformly distribute in MgB 2 matrix and they do not depress the intergrain connectivity. |
| Databáze: |
OpenAIRE |
| Externí odkaz: |
|
Full Text from ScienceDirect