Properties of GAZO/Ag/GAZO multilayer films prepared by FTS system
| Autor: | Woo Jae Kim, Hyung-Wook Choi, Yu Sup Jung, Kyung Hwan Kim |
|---|---|
| Rok vydání: | 2012 |
| Předmět: |
Materials science
business.industry Doping Condensed Matter Physics Atomic and Molecular Physics and Optics Surfaces Coatings and Films Electronic Optical and Magnetic Materials Field emission microscopy Optics Sputtering Transmittance Optoelectronics Figure of merit Electrical and Electronic Engineering Thin film business Sheet resistance Diffractometer |
| Zdroj: | Microelectronic Engineering. 89:124-128 |
| ISSN: | 0167-9317 |
| DOI: | 10.1016/j.mee.2011.02.071 |
| Popis: | GAZO (Ga-Al doped ZnO)/Ag/GAZO multilayer films were prepared by Facing Target Sputtering (FTS) methods at room temperature. The GAZO multilayer films consisted of various thickness Ag and top GAZO thin film. The electrical, optical and structural properties of the films were investigated using a four-point probe, an UV/vis spectrometer, a X-ray diffractometer (XRD), a field emission scanning electron microscope (FE-SEM) and atomic force microscopy (AFM). For the multilayer film with top and bottom GAZO thickness of 50nm and intermediate Ag thickness of 12nm, it exhibits the maximum figure of merit of 73.05x10^-^3@?^-^1 with sheet resistance of 9.1@?/sq and transmittance of 96.4% at wavelength of 550nm. |
| Databáze: | OpenAIRE |
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