Comparison studies of InGaN epitaxy with trimethylgallium and triethylgallium for photosensors application
| Autor: | Ping Chuan Chang, Kai Hsuan Lee, San Lein Wu, Yan-Kuin Su, M. H. Pilkuhn, Shoou-Jinn Chang |
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| Rok vydání: | 2012 |
| Předmět: |
Materials science
business.industry Photodetector Chemical vapor deposition Sputter deposition Condensed Matter Physics Epitaxy chemistry.chemical_compound chemistry Optoelectronics General Materials Science Metalorganic vapour phase epitaxy Triethylgallium Trimethylgallium business Layer (electronics) |
| Zdroj: | Materials Chemistry and Physics. 134:899-904 |
| ISSN: | 0254-0584 |
| DOI: | 10.1016/j.matchemphys.2012.03.087 |
| Popis: | InGaN materials grown by metalorganic chemical vapor deposition (MOCVD) using trimethylgallium (TMG) and triethylgallium (TEG) as alkyl source were compared. Ga-doped ZnO (GZO) films using radio frequency (RF) magnetron sputtering to feature Schottky contacts onto InGaN epitaxial layer with AlN or Mg-doped GaN in-situ capping layer were demonstrated. It is of great potential in application to high performance InGaN photosensors. |
| Databáze: | OpenAIRE |
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