Ionization-induced annealing of defects in 3C–SiC: Ion channeling and positron annihilation spectroscopy investigations

Autor:	N. Sreelakshmi, G. R. Umapathy, S. Abhaya, C. David, S. Ojha, S. Amirthapandian
Rok vydání:	2023
Předmět:	Mechanics of Materials Mechanical Engineering General Materials Science Condensed Matter Physics
Zdroj:	Journal of Materials Research. 38:1349-1363
ISSN:	2044-5326 0884-2914
DOI:	10.1557/s43578-023-00894-1
Databáze:	OpenAIRE
Externí odkaz:	https://explore.openaire.eu/search/publication?articleId=doi_________::2f5c13a5af28059d59303d94877ddc67 https://doi.org/10.1557/s43578-023-00894-1 Zobrazit plný text záznamu Full text from SpringerLink