Telegraph Noise as A Probe of Microscopic Hydrogen Motion in Amorphous Silicon

Autor:	Lisa M. Lust, James Kakalios
Rok vydání:	1995
Předmět:	Amorphous silicon Materials science Condensed matter physics Hydrogen Doping Analytical chemistry Conductance chemistry.chemical_element Noise (electronics) law.invention chemistry.chemical_compound chemistry law Percolation Resistor Diffusion (business)
Zdroj:	MRS Proceedings. 377
ISSN:	1946-4274 0272-9172
DOI:	10.1557/proc-377-401
Popis:	Time traces of conductance fluctuations in the co-planar current of hydrogenated amorphous silicon (a-Si:H) display sharp jumps between discrete resistance levels, termed random telegraph switching noise (RTSN). Measurements of the temperature dependence and effects of light soaking of the RTSN in n-type doped a-Si:H are reported. The rise times between the two level fluctuators yield activation energies and attempt to hop frequencies for microscopic hydrogen motion which agree with those obtained from NMR experiments. Computer simulations of a dynamical percolation random resistor network support the suggestion that the RTSN arises from local diffusion processes altering the conductance of inhomogeneous current filaments.
Databáze:	OpenAIRE
Externí odkaz:	https://explore.openaire.eu/search/publication?articleId=doi_________::2f5878f1e071fb22dd397637dd14f714 https://doi.org/10.1557/proc-377-401 Zobrazit plný text záznamu Full text from SpringerLink