| Autor: |
F. Tuminello, D. Hertkorn, M. Disabb, Rao Tatavarti, Glen Hillier, David S. McCallum, Christopher Youtsey, R. Navaratnarajah, Noren Pan, Genevieve Martin, Andree Wibowo |
| Rok vydání: |
2009 |
| Předmět: |
|
| Zdroj: |
SPIE Proceedings. |
| ISSN: |
0277-786X |
| Popis: |
InGaP/GaAs dual junction (DJ) solar cells were fabricated on epitaxial liftoff (ELO) 100 mm diameter GaAs wafers. These ELO DJ cell wafers have total semiconductor thickness less than 5 µm and weigh less than 1.7 g. The best solar cells exhibited an efficiency of 28.69% at one sun AM1.5D illumination, which is the highest reported efficiency for DJ ELO thin cells to date. The DJ ELO cells had fill factor (FF) ≫88%, open circuit voltage (Voc) of 2.32 V, and short circuit current density (Jsc) of 13.9 mA/cm2. ELO DJ cells grown on reclaimed wafers show comparable performance to DJ cells grown on new substrates. |
| Databáze: |
OpenAIRE |
| Externí odkaz: |
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