Performance Improvement in RF LDMOS Transistors Using Wider Drain Contact

Autor:	Ming-Yi Chen, Chia-Sung Chiu, Kai-Li Wang, Tiao-Yuan Huang, Chun-Hao Chen, Horng-Chih Lin, Brenda Jaw, Kun-Ming Chen, Guo-Wei Huang, Yu-Chi Yang, Bo-Yuan Chen
Rok vydání:	2013
Předmět:	LDMOS Engineering Oscillation business.industry Transistor Contact region Cutoff frequency Electronic Optical and Magnetic Materials Power (physics) law.invention law MOSFET Optoelectronics Electrical and Electronic Engineering Performance improvement business
Zdroj:	IEEE Electron Device Letters. 34:1085-1087
ISSN:	1558-0563 0741-3106
Popis:	In this letter, we proposed a new layout structure for RF laterally diffused metal-oxide-semiconductor (LDMOS) transistors. In a multifinger layout, the drain contact region was designed to be wider than the channel region. The wider drain increases the equivalent drift region width to reduce the drift resistance and suppress the quasi-saturation effect. We found that the wide-drain multifinger LDMOS devices have lower on-resistance, higher cutoff frequency, higher maximum oscillation frequency, and better power performances than the standard multifinger ones.
Databáze:	OpenAIRE
Externí odkaz:	https://explore.openaire.eu/search/publication?articleId=doi_________::2f487444223a989a5c88891a45c4626e https://doi.org/10.1109/led.2013.2272937 Zobrazit plný text záznamu