High-quality Al0.12Ga0.88N film with low dislocation density grown on facet-controlled Al0.12Ga0.88N by MOVPE
| Autor: | Akira Honshio, Yasuto Miyake, Satoshi Kamiyama, Masataka Imura, Kazuyoshi Iida, Motoaki Iwaya, Takeshi Kawashima, Isamu Akasaki, Hideki Kasugai, Hiroshi Amano |
|---|---|
| Rok vydání: | 2004 |
| Předmět: |
Aluminium nitride
business.industry Cathodoluminescence Gallium nitride Condensed Matter Physics law.invention Inorganic Chemistry Faceting chemistry.chemical_compound Optics chemistry law Materials Chemistry Optoelectronics Wafer Metalorganic vapour phase epitaxy Thin film business Light-emitting diode |
| Zdroj: | Journal of Crystal Growth. 272:377-380 |
| ISSN: | 0022-0248 |
| DOI: | 10.1016/j.jcrysgro.2004.08.101 |
| Popis: | To realize high-performance UV-light-emitting diodes (UV-LEDs), thick, crack-free and high-crystalline-quality AlGaN films with a low threading dislocation density and a device structure without any absorbing layer such as GaN are essential. Crack-free and low-dislocation-density AlGaN is developed using facet-controlled technology, and does not contain any GaN layer. As a result, the density of the threading dislocations in the overgrown AlGaN is as low as 5 x 10 7 cm -2 over the entire wafer. |
| Databáze: | OpenAIRE |
| Externí odkaz: |
|
Full Text from ScienceDirect