Reliable endpoint technique on Si trenching for backside circuit edit
| Autor: | Hideo Tanaka, Chun-Cheng Tsao |
|---|---|
| Rok vydání: | 2020 |
| Předmět: |
Optical image
business.industry Computer science Process (computing) Condensed Matter Physics Atomic and Molecular Physics and Optics Planarity testing Ic industry Surfaces Coatings and Films Electronic Optical and Magnetic Materials Hardware_GENERAL Trench Hardware_INTEGRATEDCIRCUITS Optoelectronics Electrical and Electronic Engineering Coaxial Safety Risk Reliability and Quality business |
| Zdroj: | Microelectronics Reliability. 114:113935 |
| ISSN: | 0026-2714 |
| DOI: | 10.1016/j.microrel.2020.113935 |
| Popis: | Circuit Edit (CE) techniques have been used for debug, characterization and prototyping. in the IC industry. CE jobs have become more complex to accomplish since the adaption of FinFET technology. Backside Si trenching as part of CE process is required to have the highest success rate because once punched through Si trench floor, the IC would lose functionality. Therefore, it needs reliable and quantitative end-pointing technique. The coaxial FIB column technology [1] allows to obtain optical image simultaneously, so the optical interference fringes can be used to estimate remaining of Si thickness, to monitor planarity of trench floor and to obtain trenching endpoint. We introduce reliable end-pointing technique on backside Si trenching. |
| Databáze: | OpenAIRE |
| Externí odkaz: |
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