GaN/AlGaN HBT fabrication
| Autor: | C. G. Willison, Jeffrey R. LaRoche, Randy J. Shul, K. B. Jung, S. M. Donovan, Robert G. Wilson, Fan Ren, Stephen J. Pearton, H. Cho, C.R. Abernathy, Xian-An Cao, Rose Kopf, J. Han, Peter Chow, R. Hickman, J. M. Van Hove, L. Zhang, J. J. Klaassen, Albert G. Baca |
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| Rok vydání: | 2000 |
| Předmět: |
Materials science
Fabrication Dopant business.industry Bipolar junction transistor Analytical chemistry Heterojunction Condensed Matter Physics Electronic Optical and Magnetic Materials Secondary ion mass spectrometry Materials Chemistry Optoelectronics Dry etching Electrical and Electronic Engineering business Ohmic contact Molecular beam epitaxy |
| Zdroj: | Solid-State Electronics. 44:239-244 |
| ISSN: | 0038-1101 |
| DOI: | 10.1016/s0038-1101(99)00229-4 |
| Popis: | Discrete GaN/AlGaN heterojunction bipolar transistors (HBTs) were fabricated on material grown by both metal organic chemical vapor deposition and molecular beam epitaxy. For both types of material, DC current gains of ∼10 were achieved in 90 μm emitter diameter devices measured at 300°C. Some of the key processing steps, such as ohmic contact annealing temperature and mesa fabrication by low damage dry etching, are described, together with secondary ion mass spectrometry measurements of the dopant and background impurity profiles. |
| Databáze: | OpenAIRE |
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