Chemical Vapor Deposition Growth of Degenerate p-Type Mo-Doped ReS2 Films and Their Homojunction
Autor: | Xiaoguo Song, Liang Zhen, Jing-Kai Qin, Wen-Zhu Shao, Dan-Dan Ren, Li Yang, Cheng-Yan Xu |
---|---|
Rok vydání: | 2017 |
Předmět: |
Materials science
Condensed matter physics Band gap business.industry Doping 02 engineering and technology Chemical vapor deposition 010402 general chemistry 021001 nanoscience & nanotechnology 01 natural sciences 0104 chemical sciences Semiconductor Monolayer General Materials Science Homojunction 0210 nano-technology business Diode p–n diode |
Zdroj: | ACS Applied Materials & Interfaces. 9:15583-15591 |
ISSN: | 1944-8252 1944-8244 |
Popis: | Substitutional doping of transition metal dichalcogenide two-dimensional materials has proven to be effective in tuning their intrinsic properties, such as band gap, transport characteristics, and magnetism. In this study, we realized substitutional doping of monolayer rhenium disulfide (ReS2) with Mo via chemical vapor deposition. Scanning transmission electron microscopy demonstrated that Mo atoms are successfully doped into ReS2 by substitutionally replacing Re atoms in the lattice. Electrical measurements revealed the degenerate p-type semiconductor behavior of Mo-doped ReS2 field effect transistors, in agreement with density functional theory calculations. The p–n diode device based on a doped ReS2 and ReS2 homojunction exhibited gate-tunable current rectification behaviors, and the maximum rectification ratio could reach up to 150 at Vd = −2/+2 V. The successful synthesis of p-type ReS2 in this study could largely promote its application in novel electronic and optoelectronic devices. |
Databáze: | OpenAIRE |
Externí odkaz: |