| Autor: |
N. Tsikrikas, Annamaria Gerardino, George P. Patsis, Ioannis Raptis, Evangelos Valamontes |
| Rok vydání: |
2007 |
| Předmět: |
|
| Zdroj: |
2007 Digest of papers Microprocesses and Nanotechnology. |
| DOI: |
10.1109/imnc.2007.4456108 |
| Popis: |
The effect of the number of layers of the Mo/Si structure and their relative thickness in terms of incident electron energy, on the backscattering coefficient and on the deposited energy in the resist film for a EUV mask is investigated. Experimental single pixel and test layout exposures on various Mo/Si stacks are in progress. Simulation accuracy improvement through the incorporation of secondary electrons and comparison of the simulation results with the corresponding experimental ones is in progress. |
| Databáze: |
OpenAIRE |
| Externí odkaz: |
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