AlSixNy as an embedded layer for attenuated phase-shifting mask in 193 nm and the utilization of a chemically amplified negative resist NEB-22 for maskmaking
| Autor: | Wen-an Loong, Cheng-ming Lin |
|---|---|
| Rok vydání: | 2000 |
| Předmět: |
Materials science
Plasma etcher Analytical chemistry Substrate (electronics) Sputter deposition Condensed Matter Physics Isotropic etching Atomic and Molecular Physics and Optics Surfaces Coatings and Films Electronic Optical and Magnetic Materials Sputtering Electrical and Electronic Engineering Thin film Layer (electronics) Sheet resistance |
| Zdroj: | Microelectronic Engineering. 53:133-136 |
| ISSN: | 0167-9317 |
| DOI: | 10.1016/s0167-9317(00)00280-x |
| Popis: | AlSi"xN"y (x~0.31, y~0.45) thin film as a new embedded material for AttPSM in 193 nm lithography was presented. With the good controlling of plasma sputtering of Al (100~130 W) and Si (20~50 W) under Ar (75 sccm), and nitrogen (2.5~5 sccm), AlSi"xN"y has enough deposition latitude to meet the requirements as an embedded layer. For required phase shift 180 degree, the calculated thickness d"1"8"0 of AlSi"xN"y films is in the range of 87~100 nm. The T% in 365 and 488 nm for optical inspection and alignment is below 40%. Its sheet resistance R"s, is less than 0.8 k@W/square. Helicon wave plasma etcher and Taguchi design of experiment have been applied to the study of the etching selectivity of AlSi"xN"y over substrate fused silica and negative resist NEB-22. Under chamber pressure 3 mtorr, BCl"3 45 sccm, Cl"2 7 sccm, plasma source power 1400 W and substrate bias RF power 30 W for the selectivity of AlSi"xN"y over NEB-22 was found to be 4.8:1. The selectivity of AlSi"xN"y over fused silica was 12.3:1 under chamber pressure 9 mtorr, BCl"3 13 sccm, Cl"2 45 sccm, O"2 8 sccm, plasma source power 1400 W and substrate bias RF power 30 W. A 0.3 @mm line/space etched pattern using AlSi"xN"y as embedded layer was successfully fabricated. |
| Databáze: | OpenAIRE |
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