| Popis: |
Various encapsulation oxide thin films of 20 nm Al 2 O 3 , HfO 2 , Bi 3 Ti 4 O 12 (bismuth titanate, BIT), ZrO 2 and SiO 2 on the Pt top electrodes and sol-gel derived ferroelectric PbLaZrTiO x (PLZT) capacitors were prepared, and then the hydrogen barrier characteristics were investigated by electrical properties measurements before and after in a 3% hydrogen atmosphere annealing. The Al 2 O 3 film by pulse laser deposition and the SiO 2 film by radio frequency sputtering are shown to be promising candidates as the hydrogen barrier layer and maintained 86 and 69% of an initial polarisation value even after 45 minutes of hydrogen annealing, respectively. |
