Efficient iron doping of HVPE GaN
| Autor: | Eberhard Richter, James C. Culbertson, Vijayendra K. Garg, Markus Weyers, Evan R. Glaser, Joelson André de Freitas, Aderbal C. Oliveira |
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| Rok vydání: | 2018 |
| Předmět: |
010302 applied physics
Materials science Hydride Doping Analytical chemistry Resonance 02 engineering and technology 021001 nanoscience & nanotechnology Condensed Matter Physics Epitaxy 01 natural sciences Inorganic Chemistry Paramagnetism 0103 physical sciences Mössbauer spectroscopy Materials Chemistry Sapphire Degradation (geology) 0210 nano-technology |
| Zdroj: | Journal of Crystal Growth. 500:111-116 |
| ISSN: | 0022-0248 |
| Popis: | Thick freestanding iron-doped semi-insulating GaN layers were grown by Hydride Vapor Phase Epitaxy on GaN/sapphire templates. Iron doping was achieved by using Fe57-enriched Fe2O3 reduced to elemental Fe in-situ avoiding uptake of C from organometallic sources. The morphology and crystalline quality of the films show no evidence of degradation upon iron doping. Mossbauer and spin resonance experiments demonstrate that the Fe-impurity is in the isolated Fe3+ paramagnetic state and no Fe-precipitates are formed at the highest doping levels. Low temperature photoluminescence studies are consistent with full compensation of the shallow pervasive Si and O donors. |
| Databáze: | OpenAIRE |
| Externí odkaz: |
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