| Autor: |
Lu-Sheng Hong, Ming Shien Hu, Chie-Sheng Liu |
| Rok vydání: |
2008 |
| Předmět: |
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| Zdroj: |
Journal of Physics and Chemistry of Solids. 69:576-579 |
| ISSN: |
0022-3697 |
| DOI: |
10.1016/j.jpcs.2007.07.041 |
| Popis: |
Surface carbonization of Si(1 0 0) using C 2 H 2 as the carbon source was performed in a cold-wall-type chemical vapor deposition reactor at a low pressure of 5 Torr. The carbonization process as a function of C 2 H 2 partial pressure and treatment time was investigated using X-ray photoemission spectroscopy. It was found that in comparison with a complete transformation to SiC surface on Si(1 1 1) by 8 min treatment of 5×10 −2 Torr C 2 H 2 at 1343 K, the carbonization on Si(1 0 0) under the same condition forms excessive carbon, plausibly due to the larger C 2 H 2 adsorption heat on Si(1 0 0) surface. Reducing C 2 H 2 partial pressure to 1.8×10 −3 Torr and treatment time to 2 min was enough for Si(1 0 0) to form a saturated carbide layer of about 2.0 nm in thickness. Subsequent 3C–SiC(1 0 0) epitaxial film growth was found successful especially on a 10 s carbonization-treated surface that has the least amount of excessive carbon. |
| Databáze: |
OpenAIRE |
| Externí odkaz: |
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