Thermal Surface Interface for High-Power Arsenide–Gallium Heterostructure FETs
| Autor: | V. M. Lukashin, N. K. Pristupchik, M. I. Lopin, I. V. Kulikova, V. G. Lapin, L. V. Manchenko, V. G. Kalina, A. D. Zakurdaev, A. B. Pashkovskii |
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| Rok vydání: | 2019 |
| Předmět: |
010302 applied physics
Materials science Physics and Astronomy (miscellaneous) business.industry Thermal resistance Transistor chemistry.chemical_element Heterojunction Dielectric engineering.material 01 natural sciences 010305 fluids & plasmas Arsenide law.invention chemistry.chemical_compound chemistry Coating law 0103 physical sciences engineering Optoelectronics Gallium business Overheating (electricity) |
| Zdroj: | Technical Physics. 64:220-225 |
| ISSN: | 1090-6525 1063-7842 |
| Popis: | Application of heat-conducting coatings for cooling of high-power FETs based on heterostructures with arsenide–gallium substrate is theoretically analyzed. When the basic technology for manufacturing of transistors is employed in the absence of additional efforts aimed at a decrease in the thermal resistance of the substrate, the application of an additional thermal interface that represents a heat-conducting dielectric coating makes it possible to substantially decrease the overheating of the transistor channel. A several-fold decrease in such overheating can be reached using variations in the thickness of the coating and modification of the transistor structure and working regimes. |
| Databáze: | OpenAIRE |
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