ALD-ZrO2 Gate Dielectric with Suppressed Interfacial Oxidation for High Performance MoS2 Top Gate MOSFETs

Autor:	WENHSIN CHANG, Naoya Okada, Masayo Horikawa, Takahiko Endo, Yasumitsu Miyata, Toshifumi Irisawa
Rok vydání:	2020
Zdroj:	Extended Abstracts of the 2020 International Conference on Solid State Devices and Materials.
DOI:	10.7567/ssdm.2020.h-9-03
Databáze:	OpenAIRE
Externí odkaz:	https://explore.openaire.eu/search/publication?articleId=doi_________::2ef9947255479ec39d2b202739717689 https://doi.org/10.7567/ssdm.2020.h-9-03 Zobrazit plný text záznamu