Electronic Properties of p-Type Doped Copolymers Consisting of Oligothienylene and Disilanylene Units
| Autor: | Hiroki Ago, Kazuyoshi Tanaka, Atsutaka Kunai, Mitsuo Ishikawa, Takako Kuga, Tokio Yamabe |
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| Rok vydání: | 1997 |
| Předmět: |
Materials science
Dopant General Chemical Engineering Doping General Chemistry law.invention Crystallography chemistry.chemical_compound Delocalized electron chemistry Atomic orbital law Materials Chemistry Organic chemistry Polysilane Condensed Matter::Strongly Correlated Electrons Cyclic voltammetry Spin (physics) Electron paramagnetic resonance |
| Zdroj: | Chemistry of Materials. 9:1159-1165 |
| ISSN: | 1520-5002 0897-4756 |
| DOI: | 10.1021/cm960554u |
| Popis: | In association with the previous theoretical prediction on the ferromagnetic spin correlation in p-type doped poly[disilanylene(thienylene)n] (PDST-n, n = 1−5), we have actually prepared these samples and examined their electronic properties by the combination of cyclic voltammetry (CV), ultraviolet−visible−near-infrared (UV−vis−NIR), electron spin resonance (ESR), and infrared (IR) spectroscopic measurements. It has been confirmed that electrons are removed mainly from oligothienylene units. A spin generated by the doping was found to be localized at 3pπ-atomic orbitals (AOs) of sulfur atom at n = 1. For n = 2−5 a spin was the polaronic π-spin delocalized within an oligothienylene unit. These natures of radical spins are in accordance with the previous theoretical study. However, the spin concentration of p-type doped polymers was considerably small (1 spin/ca. 400 oligothienylene units), possibly due to the aggregation of the oligothienylene units around the dopant and to the degradation of disilanylene... |
| Databáze: | OpenAIRE |
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