An ion-implanted 13 watt C-band MMIC with 60% peak power added efficiency

Autor:	W.L. Pribble, E.L. Griffin
Rok vydání:	2002
Předmět:	Power-added efficiency Engineering business.industry RF power amplifier Electrical engineering Volt-ampere Power bandwidth Integrated circuit Self-aligned gate law.invention law Hardware_INTEGRATEDCIRCUITS business Monolithic microwave integrated circuit Electronic circuit
Zdroj:	IEEE 1996 Microwave and Millimeter-Wave Monolithic Circuits Symposium. Digest of Papers.
Popis:	A GaAs MMIC power amplifier that produces in excess of 13 watts of RF power at 60% peak power added efficiency operating in C-band has been developed. Output power over 12 watts at better than 52% PAE has been measured over a 23% fractional bandwidth. The nominal circuit has been designed using non-linear modelling techniques and optimized empirically through fabrication and analysis of an 18-element Taguchi orthogonal array of circuits. The array circuits have been fabricated using ITT-GTC's Multi-Function Self Aligned Gate process.
Databáze:	OpenAIRE
Externí odkaz:	https://explore.openaire.eu/search/publication?articleId=doi_________::2ee2b84ea2a8bc25732e3e1f2beb82cb https://doi.org/10.1109/mcs.1996.506296 Zobrazit plný text záznamu