| Autor: |
Arkadiusz Malinowski, Kenji Ishikawa, Toshiya Suzuki, Andrzej Jakubowski, Masaru Hori, Hiroki Kondo, Lidia Lukasiak, Daniel Tomaszewski, Takuya Takeuchi, Hiroshi Yamamoto, Makoto Sekine |
| Rok vydání: |
2011 |
| Předmět: |
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| Zdroj: |
2011 International Conference on Simulation of Semiconductor Processes and Devices. |
| Popis: |
Investigation of radicals kinetic behavior and estimation of radical sticking coefficient become indispensable for establishing plasma processing control by its internal parameters. This approach is required for plasma processing of single-nanometer gate length field effect transistors and 3-diemnsional gates in particular. In our works we have developed new technique for radicals kinetic behavior investigation and its sticking coefficient estimation. Our approach is based on application of parallel plate structure in conjunction with numerical analysis. This approach allows for radicals behavior investigation apart from ions and ultraviolet photons. Moreover this approach allows for analysis role of radical direct and indirect fluxes. By comparison of measured profile thickness and simulated stuck radicals profile we were able to estimate hydrogen radical sticking probability to ArF photoresist. |
| Databáze: |
OpenAIRE |
| Externí odkaz: |
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