| Autor: |
M. Sweet, E.M. Sankara Narayanan, J.V. Subhas Chandra Bose, L. Ngwendson, K. Vershinin, M.M. De Souza, O. Spulber |
| Rok vydání: |
2001 |
| Předmět: |
|
| Zdroj: |
IEE Proceedings - Circuits, Devices and Systems. 148:75 |
| ISSN: |
1350-2409 |
| Popis: |
For the first time, the authors demonstrated a new MOS gated thyristor called the clustered insulated gate bipolar transistor (CIGBT), which is formed by clustering power MOSFET cathode cells within common n- and p-wells. The n- and p-wells also provide a unique self-clamping feature that protects the cathode from any surge current or voltage and thus improve its safe operating area. Detailed electrical simulations of 3 kV structures derived directly from a process simulator indicate at least 30% improvement in the on-state and switching performance of the CIGBT in comparison to an IGBT. |
| Databáze: |
OpenAIRE |
| Externí odkaz: |
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